Lead Memory CAD Engineer — Drive HBM & DRAM Innovation (Centro)

Lead Memory CAD Engineer — Drive HBM & DRAM Innovation (Centro)

14 ago
|
Micron Memory Malaysia Sdn Bhd
|
Centro

14 ago

Micron Memory Malaysia Sdn Bhd

Centro

Micron Technology, Inc. in Guadalajara invites an Sr Engineer, Memory CAD to contribute to advanced memory designs including HBM, DRAM, and emerging technologies.
You will provide day-to-day CAD tool support, collaborate with HBM design, layout, and verification teams, and support mixed-signal, transistor-level IC design processes from layout to tape-out. This requires a strong background in computer or electrical engineering with 5+ years in CAD/design and experience with memory architectures

#J-18808-Ljbffr

📌 Lead Memory CAD Engineer — Drive HBM & DRAM Innovation (Centro)
🏢 Micron Memory Malaysia Sdn Bhd
📍 Centro

Postulate a este anuncio

Muestra tus habilidades a la empresa, rellenar el formulario y deja un toque personal en la carta, ayudará el reclutador en la elección del candidato.

Suscribete a esta alerta:

Recibe por email las nuevas ofertas de trabajo para: lead memory cad engineer — drive hbm & dram innovation (centro) / centro

Suscribete a esta alerta:

Recibe por email las nuevas ofertas de trabajo para: lead memory cad engineer — drive hbm & dram innovation (centro) / centro